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md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifiers the md7ic21100n wideband integrated circuit is designed with on--chip matching that makes it usable from 2110 to 2170 mhz. this multi--stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats including td--scdma. ? typical single--carrier w--cdma performance: v dd =28volts,i dq1a + i dq1b = 190 ma, i dq2a +i dq2b = 925 ma, p out = 32 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 28.5 db power added efficiency ? 30% device output signal par ? 6. 1 db @ 0.01% probability on ccdf acpr @ 5 mhz offset ? --38 dbc in 3.84 mhz channel bandwidth ? capable of handling 5:1 vswr, @ 32 vdc, 2140 mhz, p out = 110 watts cw (3 db input overdrive from rated p out ) ? stable into a 5:1 vswr. all spurs below --60 dbc @ 1 mw to 100 watts cw p out . ? typical p out @ 1 db compression point ? 110 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s-parameters ? on--chip matching (50 ohm input, on a per side basis, dc blocked) ? internally matched for ease of use ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. figure 1. functional block diagram figure 2. pin connections quiescent current temperature compensation (1) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a note: exposed backside of the package is the source terminal for the transistors. quiescent current temperature compensation (1) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b v ds1a nc nc nc rf out1 /v ds2a 1 2 3 4 7 8 14 v gs1b 9 10 11 v gs2a v gs1a rf ina rf inb v gs2b nc v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. document number: md7ic21100n rev. 2, 2/2012 freescale semiconductor technical data 2110--2170 mhz, 32 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifiers md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 case 1618--02 to--270 wb--14 plastic md7ic21100nr1 case 1621--02 to--270 wb--14 gull plastic md7ic21100gnr1 case 1617--02 to--272 wb--14 plastic md7ic21100nbr1 ? freescale semiconductor, inc., 2008, 2011--2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +6.0 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 29 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case (case temperature 76 c, 32 w cw) stage 1, 28 vdc, i dq1a +i dq1b = 190 ma (case temperature 76 c, 32 w cw) stage 2, 28 vdc, i dq2a +i dq2b = 925 ma r jc 2.7 0.7 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 0 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics (4) gate threshold voltage (v ds =10vdc,i d =50 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds =28vdc,i dq1a +i dq1b = 190 madc) v gs(q) ? 2.9 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1a +i dq1b = 190 madc, measured in functional test) v gg(q) 5.5 6.3 7 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 270 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds =28vdc,i dq2a +i dq2b = 925 madc) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2a +i dq2b = 925 madc, measured in functional test) v gg(q) 5.3 5.9 6.8 vdc drain--source on--voltage (v gs =10vdc,i d =1adc) v ds(on) 0.1 0.3 0.8 vdc stage 2 ? dynamic characteristics (1,2) output capacitance (v ds =28vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 380 ? pf functional tests (3) (in freescale wideband 2110--2170 mhz test fixture, 50 ohm system) v dd =28vdc,i dq1a +i dq1b = 190 ma, i dq2a + i dq2b = 925 ma, p out = 32 w avg., f = 2167.5 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 27 28.5 32 db power added efficiency pae 27 30 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.6 6.1 ? db adjacent channel power ratio acpr ? -- 3 8 -- 3 6 dbc input return loss irl ? -- 1 5 -- 9 db typical performances (3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1a +i dq1b = 190 ma, i dq2a +i dq2b = 925 ma, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 110 ? w imd symmetry @ 112 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 50 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz gain flatness in 60 mhz bandwidth @ p out =32wavg. g f ? 0.3 ? db quiescent current accuracy over temperature with 4.7 k ? gate feed resistors (--30 to 85 c) (4) ? i qt ? 3 ? % average deviation from linear phase in 60 mhz bandwidth @p out =110wcw ? 0.6 ? average group delay @ p out = 110 w cw, f = 2140 mhz delay ? 2.6 ? ns part--to--part insertion phase variation @ p out =110wcw, f = 2140 mhz, six sigma window ? ? 35 ? gain variation over temperature (--30 cto+85 c) ? g ? 0.042 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.003 ? db/ c 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device i n a single--ended configuration. 4. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987.
4 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 figure 3. md7ic21100nr1(gnr1)(nbr1) test circuit schematic rf input v gg2 z3 rf output c11 v dd2 1 2 3 4 5 8 9 14 12 11 10 dut z8 quiescent current temperature compensation z9 r3 6 7 13 c8 z7 z6 c4 c3 v dd1 z2 z6 0.066 x 0.821 microstrip z7 0.066 x 0.533 microstrip z8, z9 0.080 x 0.902 microstrip pcb rogers ro4350b, 0.030 , r =3.5 z1 0.066 x 2.193 microstrip z2 0.141 x 0.126 microstrip z3 0.628 x 0.045 microstrip z4 0.628 x 0.340 microstrip z5 0.066 x 0.581 microstrip r5 v gg1 z1 z4 z5 c2 v dd1 r4 nc nc r2 v gg1 r1 v gg2 c1 r6 quiescent current temperature compensation c14 c15 c13 c12 c18 c16 c9 c6 c5 c19 c17 c10 nc c7 nc table 6. mw7ic2220nr1(gnr1)( nbr1) test circuit component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6 10 f, 50 v chip capacitors GRM55DR61H106KA88B murata c7, c8, c9, c10 5.1 pf chip capacitors atc100b5r1ct500xt atc c11 10 pf chip capacitor atc100b100jt500xt atc c12, c13, c14 1.2 pf chip capacitors atc100b1r2ct500xt atc c15 0.5 pf chip capacitor atc100b0r5ct500xt atc c16, c17 0.1 f, 100 v chip capacitors grm32nr72a104ka01b murata c18, c19 1 f, 100 v chip capacitors grm32eer72a105ka01l murata r1, r2, r3, r4 4.7 k ? , 1/4 w chip resistors crcw12064701fkea vishay r5, r6 2 ? ,1/2 w chip resistors crcw12102r00fkea vishay
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 5 rf device data freescale semiconductor, inc. figure 4. md7ic21100nr1(gnr1)(nbr1) test circuit component layout md7ic21100n rev. 2 v gg2 r1 v gg1 r2 r6 c1 v dd1 c7 r3 r4 v gg1 v gg2 c2 r5 c8 c10 c19 c17 c6 c5 c13 c15 c12 c14 c11 c4 c3 c18 c16 c9 cut out area
6 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 typical characteristics acpr (dbc) irl, input return loss (db) 2220 26 30 2060 -- 4 2 31 f, frequency (mhz) figure 5. output peak--to--average ratio compression (parc) versus broadband performance @ p out = 32 watts avg. -- 2 5 -- 1 0 -- 1 3 -- 1 6 -- 1 9 -- 2 2 g ps , power gain (db) d , drain efficiency (%) 29.6 29.2 28.8 28.4 27.6 28 27.2 26.8 26.4 30 29 28 27 -- 3 7 -- 3 8 -- 3 9 -- 4 0 -- 4 1 2080 2100 2120 2140 2160 2180 2200 -- 2 -- 1 -- 1 . 2 -- 1 . 4 -- 1 . 6 -- 1 . 8 parc (db) 300 25 30 1 1156 ma p out , output power (watts) cw figure 6. power gain versus output power @i dq1a +i dq1b = 190 ma v dd =28vdc i dq1a +i dq1b = 190 ma f = 2140 mhz g ps , power gain (db) 29 28 27 26 10 100 463 ma 300 22 32 1 238 ma i dq1a +i dq1b = 285 ma 190 ma p out , output power (watts) cw figure 7. power gain versus output power @i dq2a +i dq2b = 925 ma v dd =28vdc i dq2a +i dq2b = 925 ma f = 2140 mhz g ps , power gain (db) 30 28 26 24 10 100 143 ma 95 ma 100 -- 6 0 -- 1 0 1 im3--u two--tone spacing (mhz) figure 8. intermodulation distortion products versus tone spacing imd, intermodulatio n distortion (dbc) 10 -- 2 0 -- 3 0 -- 4 0 -- 5 0 im3--l im5--u im5--l im7--u im7--l d irl g ps acpr parc input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out =32w(avg.),i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma, single--carrier w--cdma 3.84 mhz channel bandwidth 694 ma 925 ma v dd =28vdc,p out = 112 w (pep), i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma, two--tone measurements (f1+f2)/2 = center frequency of 2140 mhz i dq2a +i dq2b = 1388 ma
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 7 rf device data freescale semiconductor, inc. typical characteristics figure 9. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 15 45 60 90 15 45 40 35 30 25 20 d , drain efficiency (%) 75 d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 29 g ps , power gain (db) 28.5 28 27.5 27 26.5 26 g ps 1 g ps acpr p out , output power (watts) avg. figure 10. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 45 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 40 35 10 100 200 10 -- 6 0 acpr (dbc) 30 25 20 0 -- 3 0 -- 4 0 -- 5 0 t c =--30 c 25 c 85 c 85 c -- 3 0 c 25 c figure 11. broadband frequency response 0 30 1650 f, frequency (mhz) v dd =28vdc p out =19dbm i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma 20 15 10 1850 gain (db) 25 gain 1950 2050 2150 2250 2350 2450 2650 irl -- 3 0 0 -- 5 -- 1 0 -- 1 5 -- 2 0 irl (db) 5--25 v dd =28vdc,i dq1a +i dq1b = 190 ma, i dq2a +i dq2b = 925 ma f = 2140 mhz, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0. 01% probab ility on ccdf 25 c 1750 2550 single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probability on ccdf i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma, f = 2140 mhz --1 db = 28.79 w --2 db = 38.93 w --3 db = 52.51 w -- 3 0 c v dd =28vdc
8 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 12. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 13. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 9 rf device data freescale semiconductor, inc. z o =50 ? z load z source f = 2220 mhz f = 2060 mhz f = 2220 mhz f = 2060 mhz v dd =28vdc,i dq1a +i dq1b = 190 ma, i dq2a +i dq2b = 925 ma, p out =32wavg. f mhz z source (1) ? z load ? 2060 40.60 -- j16.80 1.99 -- j2.90 2080 40.51 -- j16.95 1.90 -- j2.74 2100 40.42 -- j17.10 1.82 -- j2.58 2120 40.32 -- j17.26 1.75 -- j2.41 2140 40.21 -- j17.42 1.68 -- j2.24 2160 40.10 -- j17.58 1.62 -- j2.08 2180 39.97 -- j17.75 1.55 -- j1.92 2200 39.84 -- j17.91 1.48 -- j1.77 2220 39.70 -- j18.08 1.41 -- j1.60 (1) both 50 ? inputs in parallel as per the product test fixture. z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 alternative peak tune load pull characteristics 28 56 22 p3db = 52.51 dbm (178 w) p in , input power (dbm) v dd =28vdc,i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma, pulsed cw, 10 sec(on) 10% duty cycle, f = 2110 mhz 54 52 50 48 23 25 24 26 actual ideal p1db = 51.87 dbm (154 w) 55 51 53 49 27 21 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 20 19 test impedances per compression level z source ? z load ? p1db 48.64 -- j0.94 1.02 -- j3.36 figure 15. pulsed cw output power versus input power @ 28 v @ 2110 mhz 28 56 21 p in , input power (dbm) 54 52 50 47 22 24 23 26 25 27 actual ideal 55 51 53 49 20 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 19 18 48 v dd =28vdc,i dq1a +i dq1b = 190 ma i dq2a +i dq2b = 925 ma, pulsed cw, 10 sec(on) 10% duty cycle, f = 2170 mhz p3db = 52.59 dbm (182 w) p1db = 51.94 dbm (156 w) test impedances per compression level z source ? z load ? p1db 51.04 + j0.32 0.92 -- j3.48 figure 16. pulsed cw output power versus input power @ 28 v @ 2170 mhz
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 11 rf device data freescale semiconductor, inc. table 7. common source s--parameters (v dd =28v,i dq1a +i dq1b = 190 ma, i dq2a +i dq2b = 925 ma, t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1700 0.652 137.6 2.264 127.9 0.000338 110.1 0.986 170.7 1750 0.584 141.8 6.373 105.7 0.00176 --161.5 0.962 166.0 1800 0.967 149.5 22.975 30.1 0.00809 148.5 0.633 163.7 1850 0.830 109.6 14.760 --54.3 0.00544 88.8 0.872 --179.3 1900 0.609 93.0 12.528 --81.7 0.00445 92.7 0.891 175.2 1950 0.376 73.2 12.727 --115.4 0.00571 97.8 0.848 172.6 2000 0.159 50.5 11.639 --142.6 0.00781 75.0 0.785 177.3 2050 0.093 --129.9 11.706 --174.5 0.00711 50.8 0.863 --178.8 2100 0.200 --148.4 10.735 159.4 0.00593 37.7 0.921 179.9 2150 0.304 --156.5 9.872 135.1 0.00461 28.3 0.950 177.7 2200 0.386 --169.3 8.929 113.7 0.00366 28.3 0.958 176.2 2250 0.432 178.3 8.421 94.5 0.00304 33.7 0.960 175.5 2300 0.459 163.6 8.238 75.8 0.00281 41.0 0.962 175.2 2350 0.406 145.8 9.041 52.8 0.00253 46.3 0.963 175.5 2400 0.334 134.7 8.312 21.8 0.00255 54.7 0.971 175.7 2450 0.238 120.3 7.167 -- 5 . 1 0.00262 60.5 0.977 175.8 2500 0.133 110.4 5.879 --28.8 0.00270 65.2 0.981 175.8 2550 0.020 149.0 4.788 --50.7 0.00304 66.7 0.982 175.8 2600 0.102 --116.2 3.837 --70.6 0.00319 68.5 0.982 175.7 2650 0.204 --121.9 3.053 --89.3 0.00356 67.3 0.982 175.5 2700 0.280 --129.7 2.415 --105.9 0.00369 66.9 0.981 175.2 2750 0.342 --135.1 1.931 --121.3 0.00397 66.4 0.981 174.7 2800 0.392 --138.0 1.551 --135.6 0.00446 67.5 0.979 174.0 2850 0.455 --140.7 1.231 --148.0 0.00466 57.7 0.980 173.3 2900 0.503 --145.9 1.016 --160.1 0.00445 52.3 0.980 172.6 2950 0.531 --147.9 0.831 --172.2 0.00434 53.4 0.980 171.8 3000 0.566 --148.9 0.677 176.6 0.00437 54.8 0.981 171.1 3050 0.601 --149.7 0.550 166.3 0.00453 56.6 0.982 170.4 3100 0.634 --150.5 0.449 156.9 0.00486 57.6 0.982 170.0
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20 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1
md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 21 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 oct. 2008 ? initial release of data sheet 1 june 2011 ? changed esd human body model rating from class 1c to class 0 to reflect recent esd test results of the device, p. 2 ? fig. 13, mttf versus junction temperature rem oved, p. 8. refer to the device?s mttf calculator available at freescale.com/rfpower. g o to design resources > software and tools. ? fig. 14, ccdf w--cdma iq magnitude c lipping, single--carrier test si gnal and fig. 15, single--carrier w--cdma spectrum updated to show the undistorte d input test signal, p. 8 (renumbered as fig. 13 and fig. 14 after fig. 13 removed) ? added an3789, clamping of high power rf transisto rs and rfics in over--molded plastic packages to product documentation, application notes, p. 21 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 21 2 feb. 2012 ? table 3, esd protection characte ristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2 ? corrected bias conditions throughout the data s heet to reflect the true testing methodology. changed i dq1a =i dq1b = 190 ma to i dq1a +i dq1b = 190 ma and changed i dq2a =i dq2b = 925 ma to i dq2a +i dq2b = 925 ma. ? removed fig. 5, possible circuit topologies , and renumbered all subsequent figures, p. 5--10
22 rf device data freescale semiconductor, inc. md7ic21100nr1 md7ic21100gnr1 md7ic21100nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008, 2011--2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: md7ic21100n rev. 2, 2/2012

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